Specifications for BAS316,H3F

Part Number : BAS316,H3F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 100V 250MA USC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 250mA
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 150mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 3ns
Current - Reverse Leakage @ Vr : 200nA @ 80V
Capacitance @ Vr, F : 0.35pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-76, SOD-323
Supplier Device Package : USC
Operating Temperature - Junction : 150°C (Max)
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
DIODE GEN PURP 100V 250MA USC
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
21393792 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have BAS316,H3F in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for BAS316,H3F. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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