BSM180D12P3C007 Datasheet
Specifications for BSM180D12P3C007
Part Number :
BSM180D12P3C007
Manufacturer :
Rohm Semiconductor
Description :
SIC POWER MODULE
Series :
-
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C :
180A (Tc)
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 10V
Power - Max :
880W
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
Module
Supplier Device Package :
Module
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
ABC-BSM180D12P3C007
Manufacturer
Brief Description
SIC POWER MODULE
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
59097 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have BSM180D12P3C007 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for BSM180D12P3C007. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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