EPC2102ENG Datasheet
Specifications for EPC2102ENG
Part Number :
EPC2102ENG
Manufacturer :
EPC
Description :
GAN TRANS 2N-CH 60V BUMPED DIE
Series :
eGaN®
Part Status :
Discontinued at Digi-Key
FET Type :
2 N-Channel (Half Bridge)
FET Feature :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
23A
Rds On (Max) @ Id, Vgs :
4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id :
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
830pF @ 30V
Power - Max :
-
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
Die
Supplier Device Package :
Die
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
ABC-EPC2102ENG
Manufacturer
Brief Description
GAN TRANS 2N-CH 60V BUMPED DIE
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
52897 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have EPC2102ENG in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for EPC2102ENG. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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