GA20JT12-263 Datasheet
Specifications for GA20JT12-263
Part Number :
GA20JT12-263
Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 1200V 45A
Series :
-
Part Status :
Active
FET Type :
-
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
60 mOhm @ 20A
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
3091pF @ 800V
FET Feature :
-
Power Dissipation (Max) :
282W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK (7-Lead)
Package / Case :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
ABC-GA20JT12-263
Manufacturer
Brief Description
TRANS SJT 1200V 45A
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
81632 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have GA20JT12-263 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for GA20JT12-263. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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