Specifications for GA50JT12-247

Part Number : GA50JT12-247
Manufacturer : GeneSiC Semiconductor
Description : TRANS SJT 1.2KV 50A
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 7209pF @ 800V
FET Feature : -
Power Dissipation (Max) : 583W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
TRANS SJT 1.2KV 50A
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
45696 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have GA50JT12-247 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for GA50JT12-247. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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