Specifications for GT60N321(Q)

Part Number : GT60N321(Q)
Manufacturer : Toshiba Semiconductor and Storage
Description : IGBT 1000V 60A 170W TO3P LH
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 1000V
Current - Collector (Ic) (Max) : 60A
Current - Collector Pulsed (Icm) : 120A
Vce(on) (Max) @ Vge, Ic : 2.8V @ 15V, 60A
Power - Max : 170W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 330ns/700ns
Test Condition : -
Reverse Recovery Time (trr) : 2.5µs
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3PL
Supplier Device Package : TO-3P(LH)
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
IGBT 1000V 60A 170W TO3P LH
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
84915 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have GT60N321(Q) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for GT60N321(Q). Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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