IGT60R190D1SATMA1 Datasheet
Specifications for IGT60R190D1SATMA1
Part Number :
IGT60R190D1SATMA1
Manufacturer :
Infineon Technologies
Description :
IC GAN FET 600V 23A 8HSOF
Series :
CoolGaN™
Part Status :
Active
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-10V
Input Capacitance (Ciss) (Max) @ Vds :
157pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
55.5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-HSOF-8-3
Package / Case :
8-PowerSFN
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
IC GAN FET 600V 23A 8HSOF
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
85272 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have IGT60R190D1SATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IGT60R190D1SATMA1. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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