Specifications for IPI26CNE8N G

Part Number : IPI26CNE8N G
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 85V 35A TO262-3
Series : OptiMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 85V
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 26 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id : 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2070pF @ 40V
FET Feature : -
Power Dissipation (Max) : 71W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO262-3
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 85V 35A TO262-3
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
33760 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have IPI26CNE8N G in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IPI26CNE8N G. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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