Specifications for MT3S111P(TE12L,F)

Part Number : MT3S111P(TE12L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : RF TRANS NPN 6V 8GHZ PW-MINI
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 6V
Frequency - Transition : 8GHz
Noise Figure (dB Typ @ f) : 1.25dB @ 1GHz
Gain : 10.5dB
Power - Max : 1W
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Current - Collector (Ic) (Max) : 100mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-243AA
Supplier Device Package : PW-MINI
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
RF TRANS NPN 6V 8GHZ PW-MINI
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
1711493 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have MT3S111P(TE12L,F) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for MT3S111P(TE12L,F). Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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