Specifications for NTLJD3182FZTBG

Part Number : NTLJD3182FZTBG
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 20V 2.2A 6-WDFN
Series : -
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.8nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 450pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 710mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-WDFN (2x2)
Package / Case : 6-WDFN Exposed Pad
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET P-CH 20V 2.2A 6-WDFN
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
46053 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have NTLJD3182FZTBG in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for NTLJD3182FZTBG. Our email: [email protected]
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DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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