PMDPB38UNE,115 Datasheet
Specifications for PMDPB38UNE,115
Part Number :
PMDPB38UNE,115
Manufacturer :
NXP USA Inc.
Description :
MOSFET 2N-CH 20V 4A HUSON6
Series :
-
Part Status :
Obsolete
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
4A
Rds On (Max) @ Id, Vgs :
46 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
268pF @ 10V
Power - Max :
510mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-UDFN Exposed Pad
Supplier Device Package :
DFN2020-6
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
ABC-PMDPB38UNE,115
Manufacturer
Brief Description
MOSFET 2N-CH 20V 4A HUSON6
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
52702 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have PMDPB38UNE,115 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for PMDPB38UNE,115. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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