Specifications for RN1427TE85LF

Part Number : RN1427TE85LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS NPN 200MW SMINI
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 300MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
TRANS PREBIAS NPN 200MW SMINI
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
5904115 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have RN1427TE85LF in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for RN1427TE85LF. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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