SISS26DN-T1-GE3 Datasheet
Specifications for SISS26DN-T1-GE3
Part Number :
SISS26DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHANNEL 60V 60A 1212-8S
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1710pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
57W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8S (3.3x3.3)
Package / Case :
PowerPAK® 1212-8S
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
ABC-SISS26DN-T1-GE3
Manufacturer
Brief Description
MOSFET N-CHANNEL 60V 60A 1212-8S
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
821338 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have SISS26DN-T1-GE3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SISS26DN-T1-GE3. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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