Specifications for TK17E65W,S1X

Part Number : TK17E65W,S1X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 650V 17.3A TO-220AB
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 200 mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 300V
FET Feature : -
Power Dissipation (Max) : 165W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
MOSFET N-CH 650V 17.3A TO-220AB
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
87680 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have TK17E65W,S1X in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK17E65W,S1X. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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