TK4A65DA(STA4,Q,M) Datasheet
Specifications for TK4A65DA(STA4,Q,M)
Part Number :
TK4A65DA(STA4,Q,M)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 3.5A TO-220SIS
Series :
π-MOSVII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id :
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 650V 3.5A TO-220SIS
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
51072 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have TK4A65DA(STA4,Q,M) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK4A65DA(STA4,Q,M). Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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