RN2712JE(TE85L,F) Datasheet
Specifications for RN2712JE(TE85L,F)
Part Number :
RN2712JE(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2PNP PREBIAS 0.1W ESV
Series :
-
Part Status :
Active
Transistor Type :
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
22 kOhms
Resistor - Emitter Base (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Transition :
200MHz
Power - Max :
100mW
Mounting Type :
Surface Mount
Package / Case :
SOT-553
Supplier Device Package :
ESV
Weight :
-
Condition :
New and original
Quality Guarantee :
365 days warranty
Stock Resource :
Franchised Distributor / Manufacturer Direct
Country of Origin :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
TRANS 2PNP PREBIAS 0.1W ESV
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
7422324 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- ABC Semiconductor have RN2712JE(TE85L,F) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for RN2712JE(TE85L,F). Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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