RN2712JE(TE85L,F) - TRANS 2PNP PREBIAS 0.1W ESV

Manufacturer Part Number

RN2712JE(TE85L,F)

Internal Part Number

ABC-RN2712JE(TE85L,F)

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

TRANS 2PNP PREBIAS 0.1W ESV

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

7422324 Pieces

Reference Price

~~USD 0.0441~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have RN2712JE(TE85L,F) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for RN2712JE(TE85L,F). Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for RN2712JE(TE85L,F)

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : RN2712JE(TE85L,F)

Manufacturer : Toshiba Semiconductor and Storage

Description : TRANS 2PNP PREBIAS 0.1W ESV

Series : -

Part Status : Active

Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Current - Collector (Ic) (Max) : 100mA

Voltage - Collector Emitter Breakdown (Max) : 50V

Resistor - Base (R1) : 22 kOhms

Resistor - Emitter Base (R2) : -

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Current - Collector Cutoff (Max) : 100nA (ICBO)

Frequency - Transition : 200MHz

Power - Max : 100mW

Mounting Type : Surface Mount

Package / Case : SOT-553

Supplier Device Package : ESV

Weight : -

Condition : New and original

Documents for RN2712JE(TE85L,F)

Datasheets : RN2712JE(TE85L,F).pdf

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