Specifications for SI8429DB-T1-E1

Part Number : SI8429DB-T1-E1
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 8V 11.7A 2X2 4-MFP
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 8V
Current - Continuous Drain (Id) @ 25°C : 11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 35 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 5V
Vgs (Max) : ±5V
Input Capacitance (Ciss) (Max) @ Vds : 1640pF @ 4V
FET Feature : -
Power Dissipation (Max) : 2.77W (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 4-Microfoot
Package / Case : 4-XFBGA, CSPBGA
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET P-CH 8V 11.7A 2X2 4-MFP
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
1416982 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have SI8429DB-T1-E1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SI8429DB-T1-E1. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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