SI8429DB-T1-E1 - MOSFET P-CH 8V 11.7A 2X2 4-MFP

Manufacturer Part Number

SI8429DB-T1-E1

Internal Part Number

ABC-SI8429DB-T1-E1

Manufacturer

Vishay Siliconix

Brief Description

MOSFET P-CH 8V 11.7A 2X2 4-MFP

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1416982 Pieces

Reference Price

~~USD 0.231~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have SI8429DB-T1-E1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SI8429DB-T1-E1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for SI8429DB-T1-E1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI8429DB-T1-E1

Manufacturer : Vishay Siliconix

Description : MOSFET P-CH 8V 11.7A 2X2 4-MFP

Series : TrenchFET®

Part Status : Active

FET Type : P-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 8V

Current - Continuous Drain (Id) @ 25°C : 11.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V

Rds On (Max) @ Id, Vgs : 35 mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id : 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 26nC @ 5V

Vgs (Max) : ±5V

Input Capacitance (Ciss) (Max) @ Vds : 1640pF @ 4V

FET Feature : -

Power Dissipation (Max) : 2.77W (Ta), 6.25W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 4-Microfoot

Package / Case : 4-XFBGA, CSPBGA

Weight : -

Condition : New and original

Documents for SI8429DB-T1-E1

Datasheets : SI8429DB-T1-E1.pdf

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