NSB8BTHE3_A/P - DIODE GEN PURP 100V 8A TO263AB

Manufacturer Part Number
Internal Part Number
Brief Description
DIODE GEN PURP 100V 8A TO263AB
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
900970 Pieces
Reference Price
USD 0.3633
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have NSB8BTHE3_A/P in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for NSB8BTHE3_A/P. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Payment Options:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifications for NSB8BTHE3_A/P

Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : NSB8BTHE3_A/P
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 8A TO263AB
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 8A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -55°C ~ 150°C
Weight : -
Condition : New and original
Related Links : NSB8 , NSB8BT

Documents for NSB8BTHE3_A/P

Datasheets : NSB8BTHE3_A/P.pdf

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