TK39J60W,S1VQ - MOSFET N-CH 600V 38.8A TO-3P

Manufacturer Part Number

TK39J60W,S1VQ

Internal Part Number

ABC-TK39J60W,S1VQ

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N-CH 600V 38.8A TO-3P

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

86310 Pieces

Reference Price

~~USD 4.875~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TK39J60W,S1VQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK39J60W,S1VQ. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TK39J60W,S1VQ

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TK39J60W,S1VQ

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N-CH 600V 38.8A TO-3P

Series : DTMOSIV

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 38.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 65 mOhm @ 19.4A, 10V

Vgs(th) (Max) @ Id : 3.7V @ 1.9mA

Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 4100pF @ 300V

FET Feature : Super Junction

Power Dissipation (Max) : 270W (Tc)

Operating Temperature : 150°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : TO-3P(N)

Package / Case : TO-3P-3, SC-65-3

Weight : -

Condition : New and original

Documents for TK39J60W,S1VQ

Datasheets : TK39J60W,S1VQ.pdf

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