SQD50N04-5M6_T4GE3 - MOSFET N-CH 40V 50A TO252AA

Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 40V 50A TO252AA
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
874489 Pieces
Reference Price
USD 0.3743
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have SQD50N04-5M6_T4GE3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SQD50N04-5M6_T4GE3. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Payment Options:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifications for SQD50N04-5M6_T4GE3

Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SQD50N04-5M6_T4GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 40V 50A TO252AA
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 71W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252AA
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Weight : -
Condition : New and original
Related Links : SQD50N , SQD50N04-

Documents for SQD50N04-5M6_T4GE3

Datasheets : SQD50N04-5M6_T4GE3.pdf

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