EGF1AHE3_A/I - DIODE GEN PURP 50V 1A DO214BA

Manufacturer Part Number

EGF1AHE3_A/I

Internal Part Number

ABC-EGF1AHE3_A/I

Manufacturer

Vishay Semiconductor Diodes Division

Brief Description

DIODE GEN PURP 50V 1A DO214BA

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

3224872 Pieces

Reference Price

~~USD 0.1015~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have EGF1AHE3_A/I in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for EGF1AHE3_A/I. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for EGF1AHE3_A/I

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : EGF1AHE3_A/I

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 50V 1A DO214BA

Series : Automotive, AEC-Q101, Superectifier®

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 50V

Current - Average Rectified (Io) : 1A

Voltage - Forward (Vf) (Max) @ If : 1V @ 1A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 50ns

Current - Reverse Leakage @ Vr : 5µA @ 50V

Capacitance @ Vr, F : 15pF @ 4V, 1MHz

Mounting Type : Surface Mount

Package / Case : DO-214BA

Supplier Device Package : DO-214BA (GF1)

Operating Temperature - Junction : -65°C ~ 175°C

Weight : -

Condition : New and original

Documents for EGF1AHE3_A/I

Datasheets : EGF1AHE3_A/I.pdf

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