TJ8S06M3L(T6L1,NQ) - MOSFET P-CH 60V 8A DPAK-3

Manufacturer Part Number

TJ8S06M3L(T6L1,NQ)

Internal Part Number

ABC-TJ8S06M3L(T6L1,NQ)

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET P-CH 60V 8A DPAK-3

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1416982 Pieces

Reference Price

~~USD 0.231~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TJ8S06M3L(T6L1,NQ) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TJ8S06M3L(T6L1,NQ). Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TJ8S06M3L(T6L1,NQ)

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TJ8S06M3L(T6L1,NQ)

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET P-CH 60V 8A DPAK-3

Series : U-MOSVI

Part Status : Active

FET Type : P-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Current - Continuous Drain (Id) @ 25°C : 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 104 mOhm @ 4A, 10V

Vgs(th) (Max) @ Id : 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : +10V, -20V

Input Capacitance (Ciss) (Max) @ Vds : 890pF @ 10V

FET Feature : -

Power Dissipation (Max) : 27W (Tc)

Operating Temperature : 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : DPAK+

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Weight : -

Condition : New and original

Documents for TJ8S06M3L(T6L1,NQ)

Datasheets : TJ8S06M3L(T6L1,NQ).pdf

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