1N5407GHB0G - DIODE GEN PURP 800V 3A DO201AD

Manufacturer Part Number

1N5407GHB0G

Internal Part Number

ABC-1N5407GHB0G

Manufacturer

Taiwan Semiconductor Corporation

Brief Description

DIODE GEN PURP 800V 3A DO201AD

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

8022658 Pieces

Reference Price

~~USD 0.0408~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have 1N5407GHB0G in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for 1N5407GHB0G. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for 1N5407GHB0G

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : 1N5407GHB0G

Manufacturer : Taiwan Semiconductor Corporation

Description : DIODE GEN PURP 800V 3A DO201AD

Series : Automotive, AEC-Q101

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 800V

Current - Average Rectified (Io) : 3A

Voltage - Forward (Vf) (Max) @ If : 1V @ 3A

Speed : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Current - Reverse Leakage @ Vr : 5µA @ 800V

Capacitance @ Vr, F : 25pF @ 4V, 1MHz

Mounting Type : Through Hole

Package / Case : DO-201AD, Axial

Supplier Device Package : DO-201AD

Operating Temperature - Junction : -55°C ~ 150°C

Weight : -

Condition : New and original

Documents for 1N5407GHB0G

Datasheets : 1N5407GHB0G.pdf

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