BSZ110N06NS3GATMA1 - MOSFET N-CH 60V 20A TSDSON-8

Manufacturer Part Number

BSZ110N06NS3GATMA1

Internal Part Number

ABC-BSZ110N06NS3GATMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET N-CH 60V 20A TSDSON-8

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

2074555 Pieces

Reference Price

~~USD 0.15778~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have BSZ110N06NS3GATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for BSZ110N06NS3GATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for BSZ110N06NS3GATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSZ110N06NS3GATMA1

Manufacturer : Infineon Technologies

Description : MOSFET N-CH 60V 20A TSDSON-8

Series : OptiMOS™

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Current - Continuous Drain (Id) @ 25°C : 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 20A, 10V

Vgs(th) (Max) @ Id : 4V @ 23µA

Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 30V

FET Feature : -

Power Dissipation (Max) : 2.1W (Ta), 50W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : PG-TSDSON-8

Package / Case : 8-PowerVDFN

Weight : -

Condition : New and original

Documents for BSZ110N06NS3GATMA1

Datasheets : BSZ110N06NS3GATMA1.pdf

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