TK65G10N1,RQ - MOSFET N-CH 100V 65A D2PAK

Manufacturer Part Number

TK65G10N1,RQ

Internal Part Number

ABC-TK65G10N1,RQ

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N-CH 100V 65A D2PAK

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

503321 Pieces

Reference Price

~~USD 0.650325~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TK65G10N1,RQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK65G10N1,RQ. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TK65G10N1,RQ

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TK65G10N1,RQ

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N-CH 100V 65A D2PAK

Series : U-MOSVIII-H

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 65A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 81nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 5400pF @ 50V

FET Feature : -

Power Dissipation (Max) : 156W (Tc)

Operating Temperature : 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : D2PAK

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Weight : -

Condition : New and original

Documents for TK65G10N1,RQ

Datasheets : TK65G10N1,RQ.pdf

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