SCTH90N65G2V-7 - SILICON CARBIDE POWER MOSFET 650

Manufacturer Part Number

SCTH90N65G2V-7

Internal Part Number

ABC-SCTH90N65G2V-7

Manufacturer

STMicroelectronics

Brief Description

SILICON CARBIDE POWER MOSFET 650

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

63456 Pieces

Reference Price

~~USD 23.5705~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have SCTH90N65G2V-7 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SCTH90N65G2V-7. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for SCTH90N65G2V-7

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SCTH90N65G2V-7

Manufacturer : STMicroelectronics

Description : SILICON CARBIDE POWER MOSFET 650

Series : -

Part Status : Active

FET Type : N-Channel

Technology : SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss) : 650V

Current - Continuous Drain (Id) @ 25°C : 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 26 mOhm @ 50A, 18V

Vgs(th) (Max) @ Id : 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (Max) : +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 400V

FET Feature : -

Power Dissipation (Max) : 330W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : H2PAK-7

Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Weight : -

Condition : New and original

Documents for SCTH90N65G2V-7

Datasheets : SCTH90N65G2V-7.pdf

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