PHD18NQ10T,118 - MOSFET N-CH 100V 18A DPAK

Manufacturer Part Number

PHD18NQ10T,118

Internal Part Number

ABC-PHD18NQ10T,118

Manufacturer

NXP USA Inc.

Brief Description

MOSFET N-CH 100V 18A DPAK

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

45721 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have PHD18NQ10T,118 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for PHD18NQ10T,118. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for PHD18NQ10T,118

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : PHD18NQ10T,118

Manufacturer : NXP USA Inc.

Description : MOSFET N-CH 100V 18A DPAK

Series : TrenchMOS™

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 90 mOhm @ 9A, 10V

Vgs(th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 633pF @ 25V

FET Feature : -

Power Dissipation (Max) : 79W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : DPAK

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Weight : -

Condition : New and original

Documents for PHD18NQ10T,118

Datasheets : PHD18NQ10T,118.pdf

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