DMJ70H1D3SH3 - MOSFET BVDSS 651V 800V TO251

Manufacturer Part Number

DMJ70H1D3SH3

Internal Part Number

ABC-DMJ70H1D3SH3

Manufacturer

Diodes Incorporated

Brief Description

MOSFET BVDSS 651V 800V TO251

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

688233 Pieces

Reference Price

~~USD 0.4756~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have DMJ70H1D3SH3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for DMJ70H1D3SH3. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for DMJ70H1D3SH3

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : DMJ70H1D3SH3

Manufacturer : Diodes Incorporated

Description : MOSFET BVDSS 651V 800V TO251

Series : -

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 700V

Current - Continuous Drain (Id) @ 25°C : 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.3 Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 13.9nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 351pF @ 50V

FET Feature : -

Power Dissipation (Max) : 41W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : TO-251

Package / Case : TO-251-3 Stub Leads, IPak

Weight : -

Condition : New and original

Documents for DMJ70H1D3SH3

Datasheets : DMJ70H1D3SH3.pdf

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