SI5513DC-T1-GE3 - MOSFET N/P-CH 20V 3.1A 1206-8

Manufacturer Part Number

SI5513DC-T1-GE3

Internal Part Number

ABC-SI5513DC-T1-GE3

Manufacturer

Vishay Siliconix

Brief Description

MOSFET N/P-CH 20V 3.1A 1206-8

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

54041 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have SI5513DC-T1-GE3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SI5513DC-T1-GE3. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for SI5513DC-T1-GE3

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SI5513DC-T1-GE3

Manufacturer : Vishay Siliconix

Description : MOSFET N/P-CH 20V 3.1A 1206-8

Series : TrenchFET®

Part Status : Obsolete

FET Type : N and P-Channel

FET Feature : Logic Level Gate

Drain to Source Voltage (Vdss) : 20V

Current - Continuous Drain (Id) @ 25°C : 3.1A, 2.1A

Rds On (Max) @ Id, Vgs : 75 mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : -

Power - Max : 1.1W

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Package / Case : 8-SMD, Flat Lead

Supplier Device Package : 1206-8 ChipFET™

Weight : -

Condition : New and original

Documents for SI5513DC-T1-GE3

Datasheets : SI5513DC-T1-GE3.pdf

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