TN0110N3-G-P002 - MOSFET N-CH 100V 350MA TO92-3

Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 100V 350MA TO92-3
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
882749 Pieces
Reference Price
USD 0.3708
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have TN0110N3-G-P002 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TN0110N3-G-P002. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Payment Options:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifications for TN0110N3-G-P002

Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : TN0110N3-G-P002
Manufacturer : Microchip Technology
Description : MOSFET N-CH 100V 350MA TO92-3
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Weight : -
Condition : New and original
Related Links : TN011 , TN0110N

Documents for TN0110N3-G-P002

Datasheets : TN0110N3-G-P002.pdf

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