TK31V60W5,LVQ - MOSFET N -CH 600V 30.8A DFN

Manufacturer Part Number

TK31V60W5,LVQ

Internal Part Number

ABC-TK31V60W5,LVQ

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N -CH 600V 30.8A DFN

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

332808 Pieces

Reference Price

~~USD 0.9835~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TK31V60W5,LVQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK31V60W5,LVQ. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TK31V60W5,LVQ

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TK31V60W5,LVQ

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N -CH 600V 30.8A DFN

Series : DTMOSIV

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 109 mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id : 4.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs : 105nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 300V

FET Feature : -

Power Dissipation (Max) : 240W (Tc)

Operating Temperature : 150°C (TA)

Mounting Type : Surface Mount

Supplier Device Package : 4-DFN-EP (8x8)

Package / Case : 4-VSFN Exposed Pad

Weight : -

Condition : New and original

Documents for TK31V60W5,LVQ

Datasheets : TK31V60W5,LVQ.pdf

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