TK4R3E06PL,S1X - X35 PB-F POWER MOSFET TRANSISTOR

Manufacturer Part Number

TK4R3E06PL,S1X

Internal Part Number

ABC-TK4R3E06PL,S1X

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

330624 Pieces

Reference Price

~~USD 0.99~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TK4R3E06PL,S1X in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK4R3E06PL,S1X. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TK4R3E06PL,S1X

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TK4R3E06PL,S1X

Manufacturer : Toshiba Semiconductor and Storage

Description : X35 PB-F POWER MOSFET TRANSISTOR

Series : U-MOSIX-H

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 7.2 mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id : 2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 48.2nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3280pF @ 30V

FET Feature : -

Power Dissipation (Max) : 87W (Tc)

Operating Temperature : 175°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : TO-220

Package / Case : TO-220-3

Weight : -

Condition : New and original

Documents for TK4R3E06PL,S1X

Datasheets : TK4R3E06PL,S1X.pdf

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