NP82N04PDG-E1-AY - MOSFET N-CH 40V 82A TO-263

Manufacturer Part Number

NP82N04PDG-E1-AY

Internal Part Number

ABC-NP82N04PDG-E1-AY

Manufacturer

Renesas Electronics America

Brief Description

MOSFET N-CH 40V 82A TO-263

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

50784 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have NP82N04PDG-E1-AY in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for NP82N04PDG-E1-AY. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for NP82N04PDG-E1-AY

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : NP82N04PDG-E1-AY

Manufacturer : Renesas Electronics America

Description : MOSFET N-CH 40V 82A TO-263

Series : -

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 40V

Current - Continuous Drain (Id) @ 25°C : 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 41A, 10V

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 9000pF @ 25V

FET Feature : -

Power Dissipation (Max) : 1.8W (Ta), 143W (Tc)

Operating Temperature : 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : TO-263

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Weight : -

Condition : New and original

Documents for NP82N04PDG-E1-AY

Datasheets : NP82N04PDG-E1-AY.pdf

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