IPI60R099CPAAKSA1 - MOSFET N-CH 60V 31A TO-262

Manufacturer Part Number

IPI60R099CPAAKSA1

Internal Part Number

ABC-IPI60R099CPAAKSA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET N-CH 60V 31A TO-262

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

148176 Pieces

Reference Price

~~USD 2.52442~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have IPI60R099CPAAKSA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IPI60R099CPAAKSA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for IPI60R099CPAAKSA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPI60R099CPAAKSA1

Manufacturer : Infineon Technologies

Description : MOSFET N-CH 60V 31A TO-262

Series : CoolMOS™

Part Status : Not For New Designs

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 105 mOhm @ 18A, 10V

Vgs(th) (Max) @ Id : 3.5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 100V

FET Feature : -

Power Dissipation (Max) : 255W (Tc)

Operating Temperature : -40°C ~ 150°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : PG-TO262-3

Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

Weight : -

Condition : New and original

Documents for IPI60R099CPAAKSA1

Datasheets : IPI60R099CPAAKSA1.pdf

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