NTHD4N02FT1G - MOSFET N-CH 20V 2.9A CHIPFET

Manufacturer Part Number

NTHD4N02FT1G

Internal Part Number

ABC-NTHD4N02FT1G

Manufacturer

ON Semiconductor

Brief Description

MOSFET N-CH 20V 2.9A CHIPFET

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

110504 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have NTHD4N02FT1G in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for NTHD4N02FT1G. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for NTHD4N02FT1G

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : NTHD4N02FT1G

Manufacturer : ON Semiconductor

Description : MOSFET N-CH 20V 2.9A CHIPFET

Series : -

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 20V

Current - Continuous Drain (Id) @ 25°C : 2.9A (Tj)

Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 80 mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id : 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 10V

FET Feature : Schottky Diode (Isolated)

Power Dissipation (Max) : 910mW (Tj)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : ChipFET™

Package / Case : 8-SMD, Flat Lead

Weight : -

Condition : New and original

Documents for NTHD4N02FT1G

Datasheets : NTHD4N02FT1G.pdf

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