IPB65R110CFDAATMA1 - MOSFET N-CH TO263-3

Manufacturer Part Number

IPB65R110CFDAATMA1

Internal Part Number

ABC-IPB65R110CFDAATMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET N-CH TO263-3

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

192976 Pieces

Reference Price

~~USD 1.93837~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have IPB65R110CFDAATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IPB65R110CFDAATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for IPB65R110CFDAATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPB65R110CFDAATMA1

Manufacturer : Infineon Technologies

Description : MOSFET N-CH TO263-3

Series : Automotive, AEC-Q101, CoolMOS™

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 650V

Current - Continuous Drain (Id) @ 25°C : 31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 110 mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id : 4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs : 118nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3240pF @ 100V

FET Feature : -

Power Dissipation (Max) : 277.8W (Tc)

Operating Temperature : -40°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : D²PAK (TO-263AB)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Weight : -

Condition : New and original

Documents for IPB65R110CFDAATMA1

Datasheets : IPB65R110CFDAATMA1.pdf

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