US1MHE3_A/I - DIODE GEN PURP 1KV 1A DO214AC

Manufacturer Part Number

US1MHE3_A/I

Internal Part Number

ABC-US1MHE3_A/I

Manufacturer

Vishay Semiconductor Diodes Division

Brief Description

DIODE GEN PURP 1KV 1A DO214AC

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

5079914 Pieces

Reference Price

~~USD 0.064435~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have US1MHE3_A/I in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for US1MHE3_A/I. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for US1MHE3_A/I

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : US1MHE3_A/I

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 1KV 1A DO214AC

Series : Automotive, AEC-Q101

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 1000V

Current - Average Rectified (Io) : 1A

Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 75ns

Current - Reverse Leakage @ Vr : 10µA @ 1000V

Capacitance @ Vr, F : 10pF @ 4V, 1MHz

Mounting Type : Surface Mount

Package / Case : DO-214AC, SMA

Supplier Device Package : DO-214AC (SMA)

Operating Temperature - Junction : -55°C ~ 150°C

Weight : -

Condition : New and original

Documents for US1MHE3_A/I

Datasheets : US1MHE3_A/I.pdf

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