EPC2110ENGRT - GAN TRANS 2N-CH 120V BUMPED DIE

Manufacturer Part Number

EPC2110ENGRT

Internal Part Number

ABC-EPC2110ENGRT

Manufacturer

EPC

Brief Description

GAN TRANS 2N-CH 120V BUMPED DIE

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

640549 Pieces

Reference Price

~~USD 0.511~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have EPC2110ENGRT in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for EPC2110ENGRT. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for EPC2110ENGRT

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : EPC2110ENGRT

Manufacturer : EPC

Description : GAN TRANS 2N-CH 120V BUMPED DIE

Series : eGaN®

Part Status : Active

FET Type : 2 N-Channel (Dual) Common Source

FET Feature : GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss) : 120V

Current - Continuous Drain (Id) @ 25°C : 3.4A

Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V

Vgs(th) (Max) @ Id : 2.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V

Power - Max : -

Operating Temperature : -40°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Package / Case : Die

Supplier Device Package : Die

Weight : -

Condition : New and original

Documents for EPC2110ENGRT

Datasheets : EPC2110ENGRT.pdf

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