PMXB360ENEAZ - MOSFET N-CH 80V 1.1A 3DFN

Manufacturer Part Number

PMXB360ENEAZ

Internal Part Number

ABC-PMXB360ENEAZ

Manufacturer

Nexperia USA Inc.

Brief Description

MOSFET N-CH 80V 1.1A 3DFN

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

5151468 Pieces

Reference Price

~~USD 0.06354~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have PMXB360ENEAZ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for PMXB360ENEAZ. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for PMXB360ENEAZ

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : PMXB360ENEAZ

Manufacturer : Nexperia USA Inc.

Description : MOSFET N-CH 80V 1.1A 3DFN

Series : -

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 80V

Current - Continuous Drain (Id) @ 25°C : 1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 450 mOhm @ 1.1A, 10V

Vgs(th) (Max) @ Id : 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 130pF @ 40V

FET Feature : -

Power Dissipation (Max) : 400mW (Ta), 6.25W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : DFN1010D-3

Package / Case : 3-XDFN Exposed Pad

Weight : -

Condition : New and original

Documents for PMXB360ENEAZ

Datasheets : PMXB360ENEAZ.pdf

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