PHW80NQ10T,127 - MOSFET N-CH 100V 80A SOT429

Manufacturer Part Number

PHW80NQ10T,127

Internal Part Number

ABC-PHW80NQ10T,127

Manufacturer

NXP USA Inc.

Brief Description

MOSFET N-CH 100V 80A SOT429

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

45201 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have PHW80NQ10T,127 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for PHW80NQ10T,127. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for PHW80NQ10T,127

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : PHW80NQ10T,127

Manufacturer : NXP USA Inc.

Description : MOSFET N-CH 100V 80A SOT429

Series : TrenchMOS™

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 15 mOhm @ 25A, 10V

Vgs(th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 109nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4720pF @ 25V

FET Feature : -

Power Dissipation (Max) : 263W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : TO-247-3

Package / Case : TO-247-3

Weight : -

Condition : New and original

Documents for PHW80NQ10T,127

Datasheets : PHW80NQ10T,127.pdf

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