STH315N10F7-6 - MOSFET N-CH 100V 180A H2PAK-6

Manufacturer Part Number

STH315N10F7-6

Internal Part Number

ABC-STH315N10F7-6

Manufacturer

STMicroelectronics

Brief Description

MOSFET N-CH 100V 180A H2PAK-6

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

210136 Pieces

Reference Price

~~USD 1.78017~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have STH315N10F7-6 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for STH315N10F7-6. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for STH315N10F7-6

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : STH315N10F7-6

Manufacturer : STMicroelectronics

Description : MOSFET N-CH 100V 180A H2PAK-6

Series : Automotive, AEC-Q101, DeepGATE™, STripFET™ VII

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 60A, 10V

Vgs(th) (Max) @ Id : 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 12800pF @ 25V

FET Feature : -

Power Dissipation (Max) : 315W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : H2PAK-6

Package / Case : TO-263-7, D²Pak (6 Leads + Tab)

Weight : -

Condition : New and original

Documents for STH315N10F7-6

Datasheets : STH315N10F7-6.pdf

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