SIS778DN-T1-GE3 - MOSFET N-CH 30V 35A POWERPAK1212

Manufacturer Part Number

SIS778DN-T1-GE3

Internal Part Number

ABC-SIS778DN-T1-GE3

Manufacturer

Vishay Siliconix

Brief Description

MOSFET N-CH 30V 35A POWERPAK1212

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

40846 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have SIS778DN-T1-GE3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SIS778DN-T1-GE3. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for SIS778DN-T1-GE3

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SIS778DN-T1-GE3

Manufacturer : Vishay Siliconix

Description : MOSFET N-CH 30V 35A POWERPAK1212

Series : -

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 30V

Current - Continuous Drain (Id) @ 25°C : 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 5 mOhm @ 10A, 10V

Vgs(th) (Max) @ Id : 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 42.5nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1390pF @ 15V

FET Feature : Schottky Diode (Body)

Power Dissipation (Max) : 52W (Tc)

Operating Temperature : -50°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : PowerPAK® 1212-8

Package / Case : PowerPAK® 1212-8

Weight : -

Condition : New and original

Documents for SIS778DN-T1-GE3

Datasheets : SIS778DN-T1-GE3.pdf

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