TJ30S06M3L(T6L1,NQ - MOSFET P-CH 60V 30A DPAK-3

Manufacturer Part Number

TJ30S06M3L(T6L1,NQ

Internal Part Number

ABC-TJ30S06M3L(T6L1,NQ

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET P-CH 60V 30A DPAK-3

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1027705 Pieces

Reference Price

~~USD 0.3185~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TJ30S06M3L(T6L1,NQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TJ30S06M3L(T6L1,NQ. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TJ30S06M3L(T6L1,NQ

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TJ30S06M3L(T6L1,NQ

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET P-CH 60V 30A DPAK-3

Series : U-MOSVI

Part Status : Active

FET Type : P-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Current - Continuous Drain (Id) @ 25°C : 30A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 21.8 mOhm @ 15A, 10V

Vgs(th) (Max) @ Id : 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V

Vgs (Max) : +10V, -20V

Input Capacitance (Ciss) (Max) @ Vds : 3950pF @ 10V

FET Feature : -

Power Dissipation (Max) : 68W (Tc)

Operating Temperature : 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : DPAK+

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Weight : -

Condition : New and original

Documents for TJ30S06M3L(T6L1,NQ

Datasheets : TJ30S06M3L(T6L1,NQ.pdf

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