NDD60N900U1-1G - MOSFET N-CH 600V 5.9A IPAK-4

Manufacturer Part Number

NDD60N900U1-1G

Internal Part Number

ABC-NDD60N900U1-1G

Manufacturer

ON Semiconductor

Brief Description

MOSFET N-CH 600V 5.9A IPAK-4

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

87328 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have NDD60N900U1-1G in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for NDD60N900U1-1G. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for NDD60N900U1-1G

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : NDD60N900U1-1G

Manufacturer : ON Semiconductor

Description : MOSFET N-CH 600V 5.9A IPAK-4

Series : -

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±25V

Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 50V

FET Feature : -

Power Dissipation (Max) : 74W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : I-PAK

Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

Weight : -

Condition : New and original

Documents for NDD60N900U1-1G

Datasheets : NDD60N900U1-1G.pdf

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