1N5809US - DIODE GEN PURP 100V 3A B-MELF

Manufacturer Part Number

1N5809US

Internal Part Number

ABC-1N5809US

Manufacturer

Microsemi Corporation

Brief Description

DIODE GEN PURP 100V 3A B-MELF

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

74475 Pieces

Reference Price

~~USD 5.65~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have 1N5809US in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for 1N5809US. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for 1N5809US

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : 1N5809US

Manufacturer : Microsemi Corporation

Description : DIODE GEN PURP 100V 3A B-MELF

Series : -

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 100V

Current - Average Rectified (Io) : 3A

Voltage - Forward (Vf) (Max) @ If : 875mV @ 4A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 30ns

Current - Reverse Leakage @ Vr : 5µA @ 100V

Capacitance @ Vr, F : 60pF @ 10V, 1MHz

Mounting Type : Surface Mount

Package / Case : SQ-MELF, B

Supplier Device Package : B, SQ-MELF

Operating Temperature - Junction : -65°C ~ 175°C

Weight : -

Condition : New and original

Documents for 1N5809US

Datasheets : 1N5809US.pdf

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