TPC6006-H(TE85L,F) - MOSFET N-CH 40V 3.9A VS6 2-3T1A

Manufacturer Part Number

TPC6006-H(TE85L,F)

Internal Part Number

ABC-TPC6006-H(TE85L,F)

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N-CH 40V 3.9A VS6 2-3T1A

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

43656 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TPC6006-H(TE85L,F) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TPC6006-H(TE85L,F). Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TPC6006-H(TE85L,F)

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TPC6006-H(TE85L,F)

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N-CH 40V 3.9A VS6 2-3T1A

Series : U-MOSIII-H

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 40V

Current - Continuous Drain (Id) @ 25°C : 3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 75 mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id : 2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 4.4nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 251pF @ 10V

FET Feature : -

Power Dissipation (Max) : 700mW (Ta)

Operating Temperature : 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : VS-6 (2.9x2.8)

Package / Case : SOT-23-6 Thin, TSOT-23-6

Weight : -

Condition : New and original

Documents for TPC6006-H(TE85L,F)

Datasheets : TPC6006-H(TE85L,F).pdf

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