SIHB22N60S-GE3 - MOSFET N-CH 650V TO263

Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 650V TO263
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
42614 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have SIHB22N60S-GE3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SIHB22N60S-GE3. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Payment Options:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifications for SIHB22N60S-GE3

Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SIHB22N60S-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 650V TO263
Series : S
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2.81nF @ 25V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight : -
Condition : New and original
Related Links : SIHB , SIHB22N

Documents for SIHB22N60S-GE3

Datasheets : SIHB22N60S-GE3.pdf

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