RQ3E080BNTB - MOSFET N-CH 30V 8A HSMT8

Manufacturer Part Number

RQ3E080BNTB

Internal Part Number

ABC-RQ3E080BNTB

Manufacturer

Rohm Semiconductor

Brief Description

MOSFET N-CH 30V 8A HSMT8

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

6164305 Pieces

Reference Price

~~USD 0.0531~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have RQ3E080BNTB in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for RQ3E080BNTB. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for RQ3E080BNTB

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : RQ3E080BNTB

Manufacturer : Rohm Semiconductor

Description : MOSFET N-CH 30V 8A HSMT8

Series : -

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 30V

Current - Continuous Drain (Id) @ 25°C : 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 15.2 mOhm @ 8A, 10V

Vgs(th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 15V

FET Feature : -

Power Dissipation (Max) : 2W (Ta)

Operating Temperature : 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 8-HSMT (3.2x3)

Package / Case : 8-PowerVDFN

Weight : -

Condition : New and original

Documents for RQ3E080BNTB

Datasheets : RQ3E080BNTB.pdf

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